Infineon BSD Type P-Channel MOSFET, 390 mA, -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- RS Stock No.:
- 250-0521
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSD223PH6327XTSA1
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 แพ็ค แพ็คละ 10 ชิ้น)*
THB74.99
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB80.24
(รวมภาษีมูลค่าเพิ่ม)
ไม่สามารถเข้าถึงข้อมูลสต็อกได้ในขณะนี้ - โปรดกลับมาตรวจสอบอีกครั้งภายหลัง
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 10 - 10 | THB7.499 | THB74.99 |
| 20 - 90 | THB6.745 | THB67.45 |
| 100 - 240 | THB6.075 | THB60.75 |
| 250 - 490 | THB5.475 | THB54.75 |
| 500 + | THB4.928 | THB49.28 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 250-0521
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSD223PH6327XTSA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 390mA | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | BSD | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.20Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 0.25W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 390mA | ||
Maximum Drain Source Voltage Vds -20V | ||
Series BSD | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.20Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 0.25W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSD Series MOSFET -20V Drain‑Source Voltage, 0.25W Power Dissipation - BSD223PH6327XTSA1
This p‑channel MOSFET is a surface‑mount transistor designed for low‑power switching across a wide temperature range. It functions as an enhancement‑mode device for controlling current in Compact assemblies and is suitable for environments requiring extended thermal tolerance and automotive‑grade qualification.
Features and Benefits:
• 1.20Ω drain‑source resistance provides predictable conduction behaviour
• 0.39A continuous drain current supports low‑current switching loads
• 12V gate‑source rating allows standard gate‑drive voltages
• -20V drain‑source limit enables operation in negative‑voltage circuits
• 0.25W power dissipation minimises thermal loading in small assemblies
• 0.39A continuous drain current supports low‑current switching loads
• 12V gate‑source rating allows standard gate‑drive voltages
• -20V drain‑source limit enables operation in negative‑voltage circuits
• 0.25W power dissipation minimises thermal loading in small assemblies
Applications
• Suitable for battery management and low‑current power‑routing tasks
• Ideal for signal switching in Compact surface‑mount electronics
• Used with automotive sensor interfaces requiring temperature endurance
• Can be used for level‑shifting in mixed‑voltage control circuits
• Ideal for signal switching in Compact surface‑mount electronics
• Used with automotive sensor interfaces requiring temperature endurance
• Can be used for level‑shifting in mixed‑voltage control circuits
What temperature extremes can it handle?
It operates across an ambient range from -55°C to +150°C.
Which package and mounting style does it use?
It is supplied in a SOT‑363 package with a surface‑mount footprint and six pins.
Is it compliant with industry environmental standards?
It meets RoHS requirements and is qualified to AEC‑Q101 for automotive use.
What channel type and mode does it employ?
It is a P‑channel device operating in enhancement mode.
ลิงก์ที่เกี่ยวข้อง
- Infineon BSD Type P-Channel MOSFET -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- onsemi Isolated 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G
- onsemi Isolated 2 Type N Type P 700 mA 6-Pin SOT-363 FDG6332C
- Infineon BSD N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- Infineon BSV Type P-Channel MOSFET -20 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- Infineon BSD N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- DiodesZetex 2 Type N 4.6 A 6-Pin SOT-363 DMC2710UDWQ-7
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363 BSD235CH6327XTSA1
