Infineon IRF N-Channel MOSFET, 192 A, 75 V, 3-Pin TO-247
- RS Stock No.:
- 244-2929
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF300P227
- ผู้ผลิต:
- Infineon
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- RS Stock No.:
- 244-2929
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF300P227
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | IRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series IRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IRF300P227 qualification report describes the characteristics of the product with respect to quality and reliability. The qualification sample selection was done on production lots which were manufactured and tested on standard production processes and meet the defined requirements. The qualification test results of those products as outlined in this document are based on JEDEC for target applications and may reference existing qualification results of similar products. Such referencing is justified by the structural similarity of the products.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free
RoHS Compliant
Halogen-Free
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