Infineon IPP Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-220 IPP120P04P4L03AKSA2
- RS Stock No.:
- 229-1847
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPP120P04P4L03AKSA2
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ยอดรวมย่อย (1 แพ็ค แพ็คละ 5 ชิ้น)*
THB723.17
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB773.79
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
หมดสต็อกชั่วคราว
- 500 ชิ้นจะส่งได้หลังจากวันที่ 15 มกราคม 2569 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 5 - 5 | THB144.634 | THB723.17 |
| 10 - 95 | THB137.404 | THB687.02 |
| 100 - 245 | THB130.536 | THB652.68 |
| 250 - 495 | THB124.01 | THB620.05 |
| 500 + | THB117.812 | THB589.06 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 229-1847
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPP120P04P4L03AKSA2
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.54mm | |
| Width | 15.95 mm | |
| Length | 15.65mm | |
| Automotive Standard | AEC | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.54mm | ||
Width 15.95 mm | ||
Length 15.65mm | ||
Automotive Standard AEC | ||
Infineon Series IPP MOSFET, 120A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IPP120P04P4L03AKSA2
This silicon MOSFET is designed for high performance within various applications. The component features a TO-220 package that enhances its capability for effective thermal dissipation. With a maximum continuous drain current of 120A and a drain-source voltage of 40V, it offers excellent operational flexibility in demanding environments. The MOSFET operates efficiently across a wide temperature range, making it suitable for automotive and industrial applications.
Features & Benefits
• P-channel enhancement mode ensures efficient switching performance
• AEC qualified, meeting rigorous automotive standards
• Maximum operating temperature of +175°C allows for demanding requirement
• MSL1 rating supports high-temperature reflow processes
Applications
• Used in automotive control systems for efficient power management
• Effective for electric motor drive in robotics
• Incorporated into power supply circuits in industrial machinery
• Suitable for consumer electronics where compact size is essential
What is the significance of the maximum continuous drain current rating?
The maximum continuous drain current rating indicates the highest amount of current the device can handle under normal operating conditions, which is essential for ensuring reliability in applications demanding high current capacity.
How does the low Rds(on) contribute to power efficiency?
A low Rds(on) reduces power losses during operation, allowing devices to run cooler and enhancing overall system energy efficiency, which is particularly beneficial in battery-operated designs.
What safety features does this component offer for harsh environments?
This device is 100% avalanche tested, ensuring it can withstand transient conditions without failure, which is crucial for protecting circuits in unpredictable environments such as automotive and industrial applications.
What performance characteristics should one consider when integrating this component into existing systems?
Key characteristics like gate threshold voltage, maximum gate-source voltage, and thermal resistance should be evaluated to ensure compatibility with existing circuit designs and to optimise performance.
How does the operating temperature range enhance its usability in different applications?
With an operating temperature range from -55°C to +175°C, this MOSFET is versatile enough for use across a broad spectrum of applications, from extreme cold environments to high-temperature operational settings.
ลิงก์ที่เกี่ยวข้อง
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