Infineon CoolMOS CSFD N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247 IPW60R037CSFDXKSA1

ดู MOSFETs ทั้งหมด
ไม่พร้อมจำหน่ายในตอนนี้
ขออภัย เราไม่ทราบว่าสินค้านี้จะกลับมาในสต็อกเมื่อใด
RS Stock No.:
219-6020
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
IPW60R037CSFDXKSA1
ผู้ผลิต:
Infineon
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด

Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

236A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS CSFD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

37mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

245W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

136nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Length

16.13mm

Standards/Approvals

No

Width

21.1mm

Height

5.21mm

Automotive Standard

No

The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

ลิงก์ที่เกี่ยวข้อง