Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 180-7299
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SI4946BEY-T1-E3
- ผู้ผลิต:
- Vishay
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 รีล รีลละ 2500 ชิ้น)*
THB69,035.00
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB73,867.50
(รวมภาษีมูลค่าเพิ่ม)
ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 2500 - 2500 | THB27.614 | THB69,035.00 |
| 5000 - 7500 | THB26.786 | THB66,965.00 |
| 10000 + | THB25.982 | THB64,955.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 180-7299
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SI4946BEY-T1-E3
- ผู้ผลิต:
- Vishay
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.052Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 3.7W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.052Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 3.7W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1.75mm | ||
Width 4 mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Vishay MOSFET
Features and Benefits
Certifications
ลิงก์ที่เกี่ยวข้อง
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