Vishay IRF820 N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB IRF820PBF
- RS Stock No.:
- 178-0851
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF820PBF
- ผู้ผลิต:
- Vishay
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 หลอด หลอดละ 50 ชิ้น)*
THB1,435.10
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB1,535.55
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 400 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อหลอด* |
|---|---|---|
| 50 - 50 | THB28.702 | THB1,435.10 |
| 100 - 150 | THB28.078 | THB1,403.90 |
| 200 + | THB27.454 | THB1,372.70 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 178-0851
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF820PBF
- ผู้ผลิต:
- Vishay
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF820 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF820 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRF820 Series Power MOSFET, 500V Drain-Source Voltage, 50W Power Dissipation - IRF820PBF
This power MOSFET is a high-voltage switching transistor designed for through-hole mounting in power conversion and control circuits. It operates as an N-channel enhancement device intended to switch or amplify high-voltage loads within electronic systems while meeting RoHS requirements.
Features and Benefits:
• 500V drain-source rating enables high-voltage switching capability
• 50W power dissipation supports sustained power handling
• 2.5A continuous drain current allows moderate load conduction
• 3Ω maximum RDS(on) reduces conduction losses under light loads
• 24nC typical gate charge permits reasonable switching speed control
• -55°C to 150°C operating range suits wide thermal environments
• 50W power dissipation supports sustained power handling
• 2.5A continuous drain current allows moderate load conduction
• 3Ω maximum RDS(on) reduces conduction losses under light loads
• 24nC typical gate charge permits reasonable switching speed control
• -55°C to 150°C operating range suits wide thermal environments
Applications
• Suitable for SMPS primary-side switching stages
• Ideal for high-voltage lamp and heater controllers
• Used with discrete motor-drive front-ends for low-current motors
• Can be used for hobbyist high-voltage power supplies
• Used for laboratory bench test rigs requiring rugged through-hole parts
• Ideal for high-voltage lamp and heater controllers
• Used with discrete motor-drive front-ends for low-current motors
• Can be used for hobbyist high-voltage power supplies
• Used for laboratory bench test rigs requiring rugged through-hole parts
What package and mounting method does it use?
The device is supplied in a TO-220AB package configured for through-hole fitting with three pins for straightforward PCB attachment and heatsinking.
What gate voltage limits must be observed to avoid damage?
The gate-source voltage must not exceed 20V in either polarity to prevent gate-oxide stress and potential failure.
How does the forward voltage specification affect its use in circuits?
The specified forward voltage of 1.6V indicates the typical voltage drop when conducting under specified test conditions and should be accounted for in thermal and efficiency calculations.
Is this component suitable for automotive temperature extremes?
While it tolerates -55°C to 150°C, it is not designated to meet automotive-standard qualifications.
ลิงก์ที่เกี่ยวข้อง
- Vishay IRF820 N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF820PBF
- Vishay IRFBC20 N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220AB IRFBC20PBF
- Vishay IRL N-Channel Power MOSFET 100 V Enhancement, 3-Pin TO-220AB IRL530PBF
- Vishay IRF840A N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840APBF
- Infineon HEXFET N-Channel Power MOSFET 40 V Enhancement, 3-Pin TO-220AB IRF1404PBF
- Vishay IRFBE N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB IRFBF30PBF
- Vishay IRF740 N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF740PBF
- onsemi PowerTrench N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-220AB FDP2532
