Dual N-Channel MOSFET, 260 mA, 60 V, 8-Pin DFN1010B-6 Nexperia NX7002BKXBZ
- RS Stock No.:
- 153-0730
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NX7002BKXBZ
- ผู้ผลิต / Manufacturer:
- Nexperia
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 21/10/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (On a Reel of 5000)
THB4.088
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB4.374
(รวมภาษีมูลค่าเพิ่ม)
Units | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 5000 - 5000 | THB4.088 | THB20,440.00 |
| 10000 - 15000 | THB3.965 | THB19,825.00 |
| 20000 + | THB3.846 | THB19,230.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 153-0730
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NX7002BKXBZ
- ผู้ผลิต / Manufacturer:
- Nexperia
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 260 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN1010B-6 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 5.7 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 4032 mW |
| Maximum Gate Source Voltage | 20 V |
| Length | 1.15mm |
| Typical Gate Charge @ Vgs | 1 nC @ 10 V |
| Width | 1.05mm |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Height | 0.36mm |
| Minimum Operating Temperature | -55 °C |