MPN

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT

RS Stock No.:: 121-9598
Mfr. Part No.:: DMG6602SVT-7
Brand:: DiodesZetex

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT

Image representative of range

Bulk discount available

Subtotal (1 reel of 3000 units)*

THB37,476.00

(exc. VAT)

THB40,098.00

(inc. VAT)

ส่งฟรีหากซื้อเกิน ฿2,500.00

มีในสต็อก

เพิ่มอีก 75,000 ชิ้นจะส่งได้หลังจากวันที่ 09 กุมภาพันธ์ 2569 ไปอีกประมาณ 7 วันทำการ

ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง

Units	Per unit	Per Reel*
3000 - 3000	THB12.492	THB37,476.00
6000 - 9000	THB12.118	THB36,354.00
12000 +	THB11.754	THB35,262.00

*price indicative

RS Stock No.:: 121-9598
Mfr. Part No.:: DMG6602SVT-7
Brand:: DiodesZetex

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	3.4A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOT
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	140mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.27W
	Forward Voltage Vf	0.8V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	4nC
	Minimum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Height	0.9mm
	Standards/Approvals	J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101
	Width	1.6 mm
	Length	2.9mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 3.4A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOT
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 140mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.27W
	Forward Voltage Vf 0.8V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 4nC
	Minimum Operating Temperature 150°C
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Height 0.9mm
	Standards/Approvals J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101
	Width 1.6 mm
	Length 2.9mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT

ส่งฟรีหากซื้อเกิน ฿2,500.00

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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