MPN

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 4.5 A, 30 V Enhancement, 6-Pin TSOT DMG6601LVT-7

RS Stock No.:: 823-2915
Mfr. Part No.:: DMG6601LVT-7
Brand:: DiodesZetex

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 4.5 A, 30 V Enhancement, 6-Pin TSOT DMG6601LVT-7

Image representative of range

Bulk discount available

Subtotal (1 pack of 50 units)*

THB312.55

(exc. VAT)

THB334.45

(inc. VAT)

ส่งฟรีหากซื้อเกิน ฿2,500.00

มีในสต็อก

เพิ่มอีก 20,600 ชิ้นจะส่งได้หลังจากวันที่ 09 กุมภาพันธ์ 2569 ไปอีกประมาณ 7 วันทำการ

ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง

Units	Per unit	Per Pack*
50 - 700	THB6.251	THB312.55
750 - 1450	THB6.095	THB304.75
1500 +	THB6.00	THB300.00

*price indicative

RS Stock No.:: 823-2915
Mfr. Part No.:: DMG6601LVT-7
Brand:: DiodesZetex

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N, Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOT
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.75V
	Maximum Power Dissipation Pd	1.3W
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	5.4nC
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Standards/Approvals	AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0
	Length	2.9mm
	Width	1.6 mm
	Height	0.9mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Channel Type Type N, Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOT
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.75V
	Maximum Power Dissipation Pd 1.3W
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 5.4nC
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0
	Length 2.9mm
	Width 1.6 mm
	Height 0.9mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 4.5 A, 30 V Enhancement, 6-Pin TSOT DMG6601LVT-7

ส่งฟรีหากซื้อเกิน ฿2,500.00

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