Infineon IPP Type N-Channel MOSFET, 135 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- RS Stock No.:
- 349-000
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPP60R016CM8XKSA1
- ผู้ผลิต:
- Infineon
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ชิ้น | ต่อหน่วย |
|---|---|
| 1 - 9 | THB545.77 |
| 10 - 99 | THB491.35 |
| 100 + | THB452.75 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 349-000
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPP60R016CM8XKSA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IPP Series MOSFET, 600V Drain Source Voltage, 135A Continuous Drain Current - IPP60R016CM8XKSA1
This MOSFET is a high-voltage N-channel transistor designed for power switching and control in demanding electronic systems. It operates across a wide temperature span suitable for harsh environments and is supplied in a through-hole TO-220 package for straightforward heatsinking and board mounting. The device conforms to standard semiconductor approvals and is intended for applications requiring substantial current handling and thermal endurance.
Features and Benefits:
• 600V rating enables high-voltage switching applications
• 135A continuous drain current supports heavy load currents
• 16mΩ maximum Rds(on) reduces conduction losses under load
• 625W maximum power dissipation allows elevated thermal loading
• 171nC typical gate charge aids predictable switching behaviour
• Vgs±30V tolerance permits robust gate-drive margins
• 135A continuous drain current supports heavy load currents
• 16mΩ maximum Rds(on) reduces conduction losses under load
• 625W maximum power dissipation allows elevated thermal loading
• 171nC typical gate charge aids predictable switching behaviour
• Vgs±30V tolerance permits robust gate-drive margins
Applications
• Suitable for mains-level power converters and inverters
• Ideal for industrial motor drive switching stages
• Used with high-current DC-DC conversion modules
• Can be used for electronic load and power test equipment
• Suitable for power supplies in telecommunications infrastructure
• Ideal for industrial motor drive switching stages
• Used with high-current DC-DC conversion modules
• Can be used for electronic load and power test equipment
• Suitable for power supplies in telecommunications infrastructure
What ambient extremes can it withstand in operation?
It is rated for continuous operation from -55°C up to 175°C, permitting use in both cold-start and high-temperature environments.
How many pins and what mounting style are provided?
The device uses a three-pin configuration and is designed for through-hole mounting in a standard TO-220 footprint.
What gate-drive considerations are necessary for switching?
Gate voltage should remain within ±30V to protect the gate
the typical gate charge of 171nC should be accounted for when sizing drivers to meet desired switching speeds.
Which approvals indicate standard compliance for component selection?
It carries JEDEC recognised qualifications and RoHS conformity for material and manufacturing standards.
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