Infineon CoolMOS Type N-Channel MOSFET, 36.5 A, 950 V Enhancement, 3-Pin PG-TO-247 IPW95R130PFD7XKSA1
- RS Stock No.:
- 284-923
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPW95R130PFD7XKSA1
- ผู้ผลิต:
- Infineon
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- RS Stock No.:
- 284-923
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPW95R130PFD7XKSA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36.5A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | CoolMOS | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36.5A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series CoolMOS | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an Advanced power device represents the latest innovation in super junction technology, specifically designed for demanding applications such as lighting and industrial power supplies. The integration of ultra fast body diodes enhances responsiveness, making it Ideal for resonant topologies. With robust performance and superior reliability, this device stands at the forefront of efficiency in power management. Special attention has been given to reducing reverse recovery charge, enabling higher switching frequencies and increased power density in designs.
Integrated fast body diode ensures reliability
Best in class thermal performance for efficient heat dissipation
Durable construction promotes long term stability
Seamless integration into existing circuits
Optimal for high voltage applications with enhanced safety
Compact package reduces PCB footprint and increases flexibility
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