Infineon OptiMOS Type N-Channel MOSFET, 503 A, 60 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN06S5N008TATMA1
- RS Stock No.:
- 284-707
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IAUTN06S5N008TATMA1
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ไม่พร้อมจำหน่ายในตอนนี้
ขออภัย เราไม่ทราบว่าสินค้านี้จะกลับมาในสต็อกเมื่อใด
- RS Stock No.:
- 284-707
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IAUTN06S5N008TATMA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 503A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-HDSOP-16-1 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 0.79mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 358W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 503A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-HDSOP-16-1 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 0.79mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 358W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Automotive Power MOSFET is designed to meet the stringent demands of modern automotive applications, promising high reliability and efficiency. Engineered with Advanced technology, this power transistor provides exceptional performance while optimising thermal characteristics. The robust design ensures operational stability over a wide temperature range, making it an Ideal choice for a variety of automotive applications. Its compliance with industry standards like AEC Q101 signifies its enhanced quality and performance, Ideal for automotive circuits requiring intense current handling. This device encapsulates high efficiency in a Compact package, ensuring reliability through extensive electrical testing and validation.
N channel enhancement mode for efficient switching
Extended qualifications enhance automotive reliability
High thermal resistance for durability under stress
Avalanche tested for robust performance
MSL1 rating supports 260°C Peak reflow
100% electrical characterisation ensures consistency
ลิงก์ที่เกี่ยวข้อง
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN06S5N008TATMA1
- Infineon OptiMOS Type N-Channel MOSFET 120 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 16-Pin PG-HDSOP-16 IPTC007N06NM5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 120 V Enhancement, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R045D2ATMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R025D2AUMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1