Infineon OptiMOS Type N-Channel MOSFET, 120 A, 120 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1
- RS Stock No.:
- 284-711
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IAUTN12S5N018TATMA1
- ผู้ผลิต:
- Infineon
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- RS Stock No.:
- 284-711
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IAUTN12S5N018TATMA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-HDSOP-16-1 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 358W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-HDSOP-16-1 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 358W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Automotive Power MOSFET offers exceptional performance and reliability for automotive applications. With its N channel enhancement mode design, this power transistor is engineered to meet the stringent requirements of the automotive sector, ensuring superior efficiency and robust functionality. Boasting an extended qualification beyond AEC Q101, it undergoes enhanced electrical testing to guarantee durability even in harsh environments. This device supports a wide operating temperature range, making it suitable for diverse automotive conditions. Its low on state resistance and high continuous drain current capability make this MOSFET an Ideal choice for demanding power management tasks, ensuring that vehicle performance remains uncompromised.
Designed for automotive compliance
Robust for challenging environments
Enhanced testing for reliability
Excellent thermal performance
High efficiency with minimal loss
Avalanche rated for energy transients
MSL1 classification up to 260°C
Advanced gate charge for efficient switching
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