onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 178-4594
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FGH40T120SQDNL4
- ผู้ผลิต:
- onsemi
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Each (In a Tube of 30)
THB243.181
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB260.204
(รวมภาษีมูลค่าเพิ่ม)
- RS Stock No.:
- 178-4594
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FGH40T120SQDNL4
- ผู้ผลิต:
- onsemi
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 160 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 454 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5.2 x 22.74mm | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 5000pF | |
| Maximum Operating Temperature | +175 °C | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 160 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 454 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5.2 x 22.74mm | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 5000pF | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- CN
ON Semiconductor IGBT
The ON Semiconductor is a P-channel TO−247−4L IGBT through-hole mount transistor. It has a maximum current rating of 160A and a maximum voltage rating of 1200V. This IGBT is a robust and cost-effective device that provides superior performance in demanding switching applications. It offers both low on-state voltage and minimal switching loss. A soft and fast co−packaged free wheeling diode with a low forward voltage is incorporated into this device.
Features and Benefits
• Cost effective
• Extremely efficient trench with field stop technology
• Halide-free device
• High durability
• Operating temperature ranges between -55°C and 175°C
• Optimized for high speed switching
• Pb-free device
• Soft fast reverse recovery diode
• TJmax is 175°C
• Extremely efficient trench with field stop technology
• Halide-free device
• High durability
• Operating temperature ranges between -55°C and 175°C
• Optimized for high speed switching
• Pb-free device
• Soft fast reverse recovery diode
• TJmax is 175°C
Applications
• Solar inverters
• UPS
• Welding
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
ลิงก์ที่เกี่ยวข้อง
- onsemi FGH40T120SQDNL4 160 A 1200 V Through Hole
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- onsemi FGY4L100T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole

