Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-220 IRF540NPBF

RS Stock No.:: 914-8154
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF540NPBF
ผู้ผลิต:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-220 IRF540NPBF

มีส่วนลดเมื่อซื้อจำนวนมาก

ยอดรวมย่อย (1 แพ็ค แพ็คละ 20 ชิ้น)*

THB526.70

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB563.56

(รวมภาษีมูลค่าเพิ่ม)

ส่งฟรีหากซื้อเกิน ฿2,500.00

มีในสต็อก

1,520 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ

ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง

ชิ้น	ต่อหน่วย	ต่อแพ็ค*
20 - 80	THB26.335	THB526.70
100 - 280	THB25.545	THB510.90
300 - 580	THB24.779	THB495.58
600 +	THB24.035	THB480.70

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 914-8154
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF540NPBF
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	130W
	Typical Gate Charge Qg @ Vgs	71nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.54mm
	Height	8.77mm
	Width	4.69 mm
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 130W
	Typical Gate Charge Qg @ Vgs 71nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.54mm
	Height 8.77mm
	Width 4.69 mm
	Automotive Standard No

ล็อกอินเพื่อดูโมเดล CAD

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540NPBF

This MOSFET is designed to provide efficient switching capabilities and power management in various electronic applications. The device operates with a maximum continuous drain current of 33A and a maximum drain-source voltage of 100V. Housed in a TO-220AB package, this component is well-suited for both industrial and commercial uses, ensuring longevity and reliability under a range of environmental conditions.

Features & Benefits

• Utilises advanced processing for low on-resistance

• Supports fast switching speeds for efficient operation

• Fully avalanche rated for enhanced reliability under harsh conditions

• Offers a wide gate threshold voltage range for flexibility

• Designed for through-hole mounting for easy installation

Applications

• Ideal for high current switching in power supplies

• Used in automation and control systems

• Suitable for motor control and driving circuits

• Effective in inverters and converters for renewable energy systems

What is the significance of the low RDS(on) in this device?

A low RDS(on) improves efficiency by reducing power loss during operation, enabling better thermal management and enhancing overall performance in high-current applications.

How does the enhancement mode functionality influence its use?

The enhancement mode allows for low current operation until a specific gate voltage is applied, making it reliable for switching applications where precise control is essential.

What is the importance of the TO-220AB package design?

The TO-220AB package ensures effective heat dissipation, supporting high power dissipation levels while maintaining ease of mounting in various circuit configurations.

How does this MOSFET perform in extreme temperatures?

Operating effectively between -55°C to +175°C, it is designed to maintain performance in demanding environments, ensuring reliability even under challenging conditions.

What type of switching applications is this suitable for?

It is well-suited for powering loads in applications requiring rapid switching, such as motor drive systems, power converters, and various electronic control circuits.