N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK Infineon IRFS7534TRLPBF

RS Stock No.:: 820-8873
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFS7534TRLPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK Infineon IRFS7534TRLPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each: (In a Pack of 2)**

THB123.17

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB131.79

(รวมภาษีมูลค่าเพิ่ม)

750 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย	ต่อแพ็ค**
2 - 198	THB123.17	THB246.34
200 - 398	THB120.095	THB240.19
400 +	THB118.24	THB236.48

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 820-8873
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFS7534TRLPBF
ผู้ผลิต / Manufacturer:: Infineon

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 294W Maximum Power Dissipation - IRFS7534TRLPBF

This MOSFET is engineered for efficient power management in a range of electronic applications. With the ability to handle continuous drain currents up to 195A and a drain-source voltage rating of 60V, it delivers effective performance for various tasks. Its capabilities in surface-mount configurations enhance circuit efficiency and reliability for professionals in automation and electronics.

Features & Benefits

• High current capacity supports demanding loads
• Low Rds(on) of 2.4mΩ improves energy efficiency
• Designed for high temperature operation up to +175°C
• Robust avalanche and dynamic dV/dt ruggedness for dependable operation
• Fully characterised capacitance facilitates accurate switching performance

Applications

• Suitable for brushed and BLDC motor drive circuits
• Effective for battery-powered and power converters
• Useful in half-bridge and full-bridge topologies for various designs
• Applicable in DC/AC inverters and resonant mode power supplies
• Ideal for redundant power switches in critical systems

How does this component handle thermal management?

It operates efficiently under high thermal conditions with a maximum temperature of +175°C.

What are the implications of the low Rds(on) value?

The low on-resistance minimises conduction losses, leading to enhanced efficiency in power distribution.

Can it be used in applications with variable load conditions?

Yes, its high current capacity and robust characteristics make it capable of managing fluctuating load conditions effectively.

What type of mounting is recommended for optimal performance?

Surface mount technology is suggested for efficient heat dissipation and compact integration.

How does it perform under pulsed conditions?

It is capable of safely handling pulsed drain currents up to 944A, providing flexibility for transient situations without failure.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	195 A
Maximum Drain Source Voltage	60 V
Package Type	D2PAK (TO-263)
Series	StrongIRFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	294 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	186 nC @ 10 V
Length	10.67mm
Number of Elements per Chip	1
Width	9.65mm
Transistor Material	Si
Height	4.83mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V