N-Channel MOSFET, 82 A, 500 V, 4-Pin SOT-227 IXYS IXFN100N50Q3
- RS Stock No.:
- 804-7565
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN100N50Q3
- ผู้ผลิต / Manufacturer:
- IXYS
สามารถสั่งจองล่วงหน้าได้
ราคา / Price Each
THB2,013.41
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB2,154.35
(รวมภาษีมูลค่าเพิ่ม)
Units | ต่อหน่วย |
|---|---|
| 1 - 2 | THB2,013.41 |
| 3 - 4 | THB1,963.07 |
| 5 + | THB1,932.87 |
- RS Stock No.:
- 804-7565
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN100N50Q3
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 82 A |
| Maximum Drain Source Voltage | 500 V |
| Series | HiperFET, Q3-Class |
| Package Type | SOT-227B |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 49 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Power Dissipation | 960 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 255 nC @ 10 V |
| Length | 38.23mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 25.07mm |
| Height | 9.6mm |
| Minimum Operating Temperature | -55 °C |