N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KT1G
- RS Stock No.:
- 780-0478
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- 2N7002KT1G
- ผู้ผลิต / Manufacturer:
- onsemi
ราคา / Price Each: (In a Pack of 100)
THB2.228
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB2.384
(รวมภาษีมูลค่าเพิ่ม)
1200 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
Units | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 100 - 700 | THB2.228 | THB222.80 |
| 800 - 1400 | THB2.183 | THB218.30 |
| 1500 + | THB2.14 | THB214.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 780-0478
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- 2N7002KT1G
- ผู้ผลิต / Manufacturer:
- onsemi
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-Channel Power MOSFET, 60V, ON Semiconductor
The 2N7002K is a small signal MOSFET. This MOSFET is a single N-Channel featuring ESD protection in a surface mount package. This MOSFET boats improved system efficiency and makes great use in portable applications.
Features and Benefits:
• ESD Protected
• N-Channel
• Low RDS
• PB & Halogen free
• Drain to source – 60V
• Improved system efficiency
• N-Channel
• Low RDS
• PB & Halogen free
• Drain to source – 60V
• Improved system efficiency
Applications:
• DC – DC Converter
• Level shift circuits
• Low side load switches
• Portable applications such as; phones, PDA’s, DSCs, laptops and tablets.
• Level shift circuits
• Low side load switches
• Portable applications such as; phones, PDA’s, DSCs, laptops and tablets.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semiconductor
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 380 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Power Dissipation | 420 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 1.4mm |
| Typical Gate Charge @ Vgs | 0.7 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 3.04mm |
| Height | 1.01mm |
| Minimum Operating Temperature | -55 °C |