onsemi QFET N-Channel MOSFET, 16 A, 250 V, 3-Pin DPAK FQD16N25CTM
- RS Stock No.:
- 671-0964
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FQD16N25CTM
- ผู้ผลิต:
- onsemi
มีส่วนลดเมื่อซื้อจำนวนมาก
ยอดรวมย่อย (1 แพ็ค แพ็คละ 5 ชิ้น)*
THB84.94
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB90.885
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
สต็อกสุดท้ายของ RS
- 230 ชิ้นสุดท้ายพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 5 - 20 | THB16.988 | THB84.94 |
| 25 - 95 | THB16.648 | THB83.24 |
| 100 - 245 | THB16.316 | THB81.58 |
| 250 - 495 | THB15.99 | THB79.95 |
| 500 + | THB15.67 | THB78.35 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 671-0964
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FQD16N25CTM
- ผู้ผลิต:
- onsemi
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 250 V | |
| Series | QFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 270 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 41 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.6mm | |
| Transistor Material | Si | |
| Width | 6.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.3mm | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 250 V | ||
Series QFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 270 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 41 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Transistor Material Si | ||
Width 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 2.3mm | ||
- COO (Country of Origin):
- CN
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ลิงก์ที่เกี่ยวข้อง
- onsemi QFET Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-3PN
- Fairchild QFET N-Channel MOSFET Transistor 200 V, 3-Pin DPAK FQD10N20CTM
- onsemi QFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-3PN
- onsemi QFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-3PN FQA40N25
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252 FDD18N20LZ
- onsemi MegaFET Type N-Channel MOSFET 50 V Enhancement, 3-Pin TO-252 RFD16N05LSM9A
- onsemi RFD16N06LESM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 RFD16N06LESM9A
