Vishay IRFB11N50A N-Channel Power MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220AB IRFB11N50APBF
- RS Stock No.:
- 541-1944P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFB11N50APBF
- ผู้ผลิต:
- Vishay
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย 13 ชิ้น (จัดส่งเป็นเทป)*
THB1,153.23
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB1,233.96
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- เพิ่มอีก 219 ชิ้นจะส่งได้หลังจากวันที่ 09 ตุลาคม 2569 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย |
|---|---|
| 13 - 24 | THB88.71 |
| 25 + | THB87.33 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 541-1944P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFB11N50APBF
- ผู้ผลิต:
- Vishay
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRFB11N50A | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 520mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRFB11N50A | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 520mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRFB11N50A Series Power MOSFET, 500V Drain Source Voltage, 11A Continuous Drain Current - IRFB11N50APBF
This power MOSFET is a high-voltage N-channel switching device designed for through-hole board mounting in industrial and power electronics contexts. It operates across a wide temperature span, supports substantial switching currents and voltages, and is supplied in a TO-220AB package for straightforward heatsinking and chassis attachment.
Features and Benefits:
• 500V drain rating enables high-voltage switching applications
• 11A continuous drain current supports heavy load handling
• 170W maximum dissipation allows significant power switching
• 520mΩ Rds(on) gives predictable conduction losses
• 52nC typical gate charge permits controlled gate-drive design
• 30V gate limit protects against excessive drive voltages
• 11A continuous drain current supports heavy load handling
• 170W maximum dissipation allows significant power switching
• 520mΩ Rds(on) gives predictable conduction losses
• 52nC typical gate charge permits controlled gate-drive design
• 30V gate limit protects against excessive drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used with discrete MOSFET assemblies in power inverters
• Can be used for switch-mode power regulators and controllers
• Appropriate for laboratory power test rigs and prototypes
• Ideal for industrial motor-drive switching stages
• Used with discrete MOSFET assemblies in power inverters
• Can be used for switch-mode power regulators and controllers
• Appropriate for laboratory power test rigs and prototypes
What thermal range can I expect for field and storage conditions?
It functions between -55°C and 150°C, allowing use in harsh ambient environments.
How is the device mounted and cooled in a system?
The TO-220AB through-hole format permits bolting to an external heatsink or chassis for enhanced thermal transfer.
What gate-drive considerations are important to prevent damage?
Keep gate voltage within a 30V limit and design the driver to charge approximately 52nC to switch reliably.
How does the forward voltage affect conduction in circuits?
The forward voltage of 1.5V will influence total system losses during conduction and should be included in thermal and efficiency calculations.