Vishay SIHP N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- RS Stock No.:
- 279-9927P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SIHP155N60EF-GE3
- ผู้ผลิต:
- Vishay
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (10 ชิ้น, จัดส่งในหลอด)*
THB1,470.20
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB1,573.10
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 946 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย |
|---|---|
| 10 - 28 | THB147.02 |
| 30 - 98 | THB143.875 |
| 100 + | THB141.255 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 279-9927P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SIHP155N60EF-GE3
- ผู้ผลิต:
- Vishay
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.157Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.157Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHP155N60EF-GE3
This MOSFET is a through-hole N-channel transistor designed for high-voltage switching and power applications. It operates across an extended temperature range and is supplied in a TO-220AB package suitable for conventional heatsinking and panel mounting. The device is intended for engineers requiring a robust semiconductor for discrete power stages and switching topologies where a combination of voltage capability and thermal endurance is needed.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications
• 21A continuous drain current supports substantial load currents
• 0.157 Ω low Rds(on) reduces conduction losses under load
• 179W power dissipation allows higher thermal loading
• 38 nC typical gate charge for manageable switching energy
• 30V gate tolerance supports wide gate-drive voltages
• 21A continuous drain current supports substantial load currents
• 0.157 Ω low Rds(on) reduces conduction losses under load
• 179W power dissipation allows higher thermal loading
• 38 nC typical gate charge for manageable switching energy
• 30V gate tolerance supports wide gate-drive voltages
Applications
• Suitable for mains and high-voltage inverter switches
• Used with power supplies requiring robust thermal margin
• Ideal for industrial motor drive stages
• Can be used for DC-DC converters with high-voltage rails
• Used for general-purpose switching in power electronics
• Used with power supplies requiring robust thermal margin
• Ideal for industrial motor drive stages
• Can be used for DC-DC converters with high-voltage rails
• Used for general-purpose switching in power electronics
What ambient temperatures can the device withstand in operation?
It is specified to operate between -55 °C and 150 °C, enabling use in harsh thermal environments.
How is the package useful for thermal management?
The TO-220AB format provides a metal tab for direct attachment to heatsinks, improving heat transfer for high dissipation.
What gate-drive constraints should be observed?
The maximum gate-to-source voltage is 30V, so gate drivers should be limited to this value to avoid overstress.
Is the device compliant with common material restrictions?
It meets RoHS requirements, restricting certain hazardous substances in its construction.