N-Channel MOSFET, 9.9 A, 500 V PG-TO220-3 Infineon IPP50R380CEXKSA1

This MOSFET is tailored for high-voltage power applications, focusing on efficiency and dependability. Incorporating CoolMOS™ technology, it improves switching performance while minimising losses, making it advantageous for various industrial applications and significantly enhancing energy management.

• Low Rds(on) reduces conduction losses, which contributes to efficiency
• High continuous drain current rating accommodates rigorous applications
• Simplifies integration into existing systems due to easy drivability
• Flexible gate threshold voltage broadens compatibility with different circuits
• Sturdy package design ensures durability in challenging environments

• Suitable for power factor correction (PFC) stages
• Works well in hard-switching PWM stages
• Applicable in resonant switching for LCD and PDP televisions
• Effective in lighting for efficient power management
• Utilised in power supplies for PCs and automation systems

The MOSFET functions effectively with a maximum gate-source voltage of ±30 V, optimising control across various applications.

With a maximum power dissipation of 98 W, it operates efficiently between -55°C and +150°C, making it suitable for a range of thermal conditions.

It can manage pulse currents up to 32.4A, supporting transient conditions competently without compromising performance.

Superjunction technology lowers both switching and conduction losses, enhancing overall efficiency and extending device lifespan in applications.

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