MOSFET, 8.7 A, 150 V TO-220 Infineon IRFI4019H-117PXKMA1

The Infineon digital audio MOSFET half-bridge is specifically designed for class D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Further more, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Low RDS(on)
Dual N-Channel MOSFET
Integrated Half Bridge package
Low Qrr
Environmentally friendly
High power density
Integrated design
Board savings
Low EMI

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