N-Channel MOSFET, 35 A, 650 V, 3-Pin D2PAK Infineon IPB60R060C7ATMA1

The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. This series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on) A below 1Ohm*mm². It is suitable for hard and soft switching (PFC and high performance LLC). It has an increased MOSFET dv/dt ruggedness to 120V/ns and increased efficiency.

Enabling higher system efficiency by lower switching losses
Increased power density solutions due to smaller packages
Suitable for applications such as server, telecom and solar

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