คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTHL
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	272W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	66nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Length	15.87mm
	Width	4.82 mm
	Height	20.82mm
	Standards/Approvals	No
	Automotive Standard	No

	เลือกทั้งหมด
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTHL
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 272W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 66nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Length 15.87mm
	Width 4.82 mm
	Height 20.82mm
	Standards/Approvals No
	Automotive Standard No

Datasheet NTHL095N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 66 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 78 mΩ

Benefits

Lower peak Vds and lower Vgs oscillation

Higher system reliability in LLC and Phase shift full bridge circuit

Lower switching loss

Higher system reliability at low temperature operation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 36 A, 650 V Enhancement, 3-Pin TO-247 NTHL095N65S3HF

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