Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin HSOF
- RS Stock No.:
- 178-7451
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPT007N06NATMA1
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 รีล รีลละ 2000 ชิ้น)*
THB223,060.00
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB238,680.00
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- 2,000 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 2000 - 2000 | THB111.53 | THB223,060.00 |
| 4000 - 6000 | THB108.184 | THB216,368.00 |
| 8000 + | THB104.939 | THB209,878.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 178-7451
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPT007N06NATMA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 216nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Length | 10.58mm | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 216nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Length 10.58mm | ||
Automotive Standard No | ||
สถานะRoHS: ได้รับการยกเว้น
Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IPT007N06NATMA1
This MOSFET is a high-current N-channel enhancement device designed for power switching in demanding electronic systems. It operates across a wide temperature range suitable for harsh environments and is supplied in a surface-mount HSOF package to support compact board layouts and efficient thermal management.
Features and Benefits:
• 60V drain rating enabling medium-voltage power designs
• 300A continuous current handling for heavy-load switching
• 1mΩ Rds(on) reducing conduction losses in high-current paths
• 375W power dissipation allowing sustained high-power operation
• 216nC typical gate charge for predictable gate-drive requirements
• ±20V gate tolerance supporting robust gate-drive transients
• 300A continuous current handling for heavy-load switching
• 1mΩ Rds(on) reducing conduction losses in high-current paths
• 375W power dissipation allowing sustained high-power operation
• 216nC typical gate charge for predictable gate-drive requirements
• ±20V gate tolerance supporting robust gate-drive transients
Applications
• Suitable for server and data centre power conversion stages
• Ideal for motor-drive inverter output stages
• Used for high-current synchronous rectification in PSUs
• Can be used for DC-DC converters in telecoms equipment
• Suitable for industrial power management and drives
• Ideal for motor-drive inverter output stages
• Used for high-current synchronous rectification in PSUs
• Can be used for DC-DC converters in telecoms equipment
• Suitable for industrial power management and drives
What thermal limits should designers consider for continuous operation?
The device is rated to dissipate up to 375W
designers must ensure adequate PCB copper, thermal vias, or heatsinking to keep junction temperature within acceptable bounds given system power loss.
How does gate-charge impact drive circuitry selection?
With a typical gate charge of 216nC, gate drivers must supply sufficient peak current and switching speed to achieve desired transition times while managing switching losses and EMI.
What are the devices mechanical mounting and pin-count details?
It is supplied in an HSOF surface-mount package with eight pins, enabling low-inductance board-level connections for high-current paths.
What operating temperature range can be expected in system design?
The component is specified to operate from -55°C up to 175°C, permitting use in thermally challenging environments when appropriate thermal design practices are applied.
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