คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTH
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	81nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	313W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Width	4.82 mm
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Automotive Standard	No

	เลือกทั้งหมด
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTH
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 81nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 313W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Width 4.82 mm
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Automotive Standard No

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 81 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

Lower switching loss

Excellent body diode performance (low Qrr, robust body diode)

Higher system reliability in LLC and Phase shift full bridge circuit

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 70 mΩ

Applications

Telecommunication

Cloud system

Industrial

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTH Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247 NTHL082N65S3F

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