Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN

RS Stock No.:: 168-6031
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRLHS2242TRPBF
ผู้ผลิต:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ยอดรวมย่อย (1 รีล รีลละ 4000 ชิ้น)*

THB19,128.00

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB20,468.00

(รวมภาษีมูลค่าเพิ่ม)

ส่งฟรีหากซื้อเกิน ฿2,500.00

สต็อกสุดท้ายของ RS

24,000 ชิ้นสุดท้ายพร้อมจัดส่งจากคลังสินค้าต่างประเทศ

ชิ้น	ต่อหน่วย	ต่อม้วน*
4000 - 4000	THB4.782	THB19,128.00
8000 - 12000	THB4.638	THB18,552.00
16000 +	THB4.499	THB17,996.00

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 168-6031
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRLHS2242TRPBF
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	20V
	Package Type	PQFN
	Series	HEXFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	53mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	9.6W
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	2.1 mm
	Height	0.95mm
	Length	2.1mm
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 20V
	Package Type PQFN
	Series HEXFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 53mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 9.6W
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 2.1 mm
	Height 0.95mm
	Length 2.1mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF

This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.

Features & Benefits

• Low Rds(on) ensures high efficiency and reduced heat generation

• Capable of handling continuous drain current of 7.2A for robust performance

• Compact 6-pin DFN package facilitates easy integration into limited spaces

• Enhancement mode operation allows for versatile design options

• Provides excellent thermal resistance for improved longevity

Applications

• Used for system/load switching in automation systems

• Ideal for charge and discharge switching in battery management

• Suitable for Compact electronic devices requiring high efficiency

• Employed in electrical control systems and power management circuits

What is the significance of the low Rds(on) feature?

The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is VITAL for high power applications.

How does this component manage thermal performance?

It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.

Can it handle varying operational environments?

Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.

Is it suitable for high-frequency applications?

The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.

What are the mounting requirements for optimal performance?

For best outcomes, it should be mounted on a PCB with adequate thermal management features to optimise heat dissipation and electrical connections.