onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin

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RS Stock No.:
166-2712
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
FDME1023PZT
ผู้ผลิต:
onsemi
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เลือกทั้งหมด

Brand

onsemi

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

20V

Series

PowerTrench

Package Type

MicroFET Thin

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

142mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.4W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

7.7nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

0.5mm

Length

1.6mm

Width

1.6 mm

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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