Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3

RS Stock No.:: 653-158
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SQ2389CES-T1_GE3
ผู้ผลิต:: Vishay

Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

ยอดรวมย่อย (1 รีล รีลละ 3000 ชิ้น)*

THB25,080.00

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB26,850.00

(รวมภาษีมูลค่าเพิ่ม)

ไม่สามารถเข้าถึงข้อมูลสต็อกได้ในขณะนี้ - โปรดกลับมาตรวจสอบอีกครั้งภายหลัง

ชิ้น	ต่อหน่วย	ต่อม้วน*
3000 +	THB8.36	THB25,080.00

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 653-158
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SQ2389CES-T1_GE3
ผู้ผลิต:: Vishay

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Vishay
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	-4.1A
	Maximum Drain Source Voltage Vds	-40V
	Series	SQ2389CES
	Package Type	SOT-23
	Mount Type	PCB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.094Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	2.64mm
	Length	3.04mm
	Automotive Standard	AEC-Q101

	เลือกทั้งหมด
	Brand Vishay
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id -4.1A
	Maximum Drain Source Voltage Vds -40V
	Series SQ2389CES
	Package Type SOT-23
	Mount Type PCB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.094Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 2.64mm
	Length 3.04mm
	Automotive Standard AEC-Q101

Datasheet - SQ2389CES-T1_GE3

Vishay SQ2389CES Series Single MOSFETs, -40V Maximum Drain Source Voltage, -4.1A Maximum Continuous Drain Current - SQ2389CES-T1_GE3

This single MOSFETs device is a P‑channel enhancement‑mode transistor designed for use on printed circuit boards in automotive and industrial control environments. It provides high‑temperature operation and low forward voltage for switching and protection roles within systems that require Compact SOT‑23 packaging and automotive‑grade robustness.

Features and Benefits:

• -40V rating enables handling of moderate negative rail voltages for switching
• 0.094 Ω RDS(on) minimises conduction losses during load operation
• -4.1 A continuous drain current supports moderate power loads on PCBs
• 12 nC typical gate charge reduces drive energy for Faster switching
• 3W power dissipation allows sustained operation at elevated power levels
• -55 °C to 175 °C range suits extended thermal environments

Applications

• Suitable for high‑side switching in automotive electronic modules
• Ideal for load protection in battery management systems
• Used for reverse‑polarity protection in vehicle electronics
• Can be used for power switching in industrial automation controllers

What package should I plan for on the PCB footprint?

The device comes in a three‑lead SOT‑23 package, requiring a small surface‑mount footprint compatible with standard SOT‑23 land patterns.

How does gate drive voltage influence use in systems?

The gate may be driven up to 20 V

ensure gate‑source excursions remain within that limit to avoid device stress.

What thermal considerations apply for sustained operation?

With a maximum junction temperature of 175 °C and 3W dissipation, thermal management such as copper pours or heatsinking is recommended for continuous high‑power use.

Can it meet automotive environmental demands?

It is qualified to AEC‑Q101 stress tests and is RoHS‑compliant, aligning with automotive component requirements.

What are the expected switching characteristics?

Typical gate charge of 12 nC indicates a modest charge requirement, supporting relatively low driving energy for switching transitions.