Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3

RS Stock No.:: 653-158
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SQ2389CES-T1_GE3
ผู้ผลิต:: Vishay

Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3

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Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23

RS Stock No.: 653-160

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RS Stock No.:: 653-158
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: SQ2389CES-T1_GE3
ผู้ผลิต:: Vishay

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-4.1A
	Maximum Drain Source Voltage Vds	-40V
	Package Type	SOT-23
	Series	SQ2389CES
	Mount Type	PCB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.094Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Width	2.64mm
	Length	3.04mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	เลือกทั้งหมด
	Brand Vishay
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Continuous Drain Current Id -4.1A
	Maximum Drain Source Voltage Vds -40V
	Package Type SOT-23
	Series SQ2389CES
	Mount Type PCB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.094Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Width 2.64mm
	Length 3.04mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SQ2389CES-T1_GE3

Vishay SQ2389CES Series Single MOSFETs, 3W Maximum Power Dissipation, -40V Maximum Drain Source Voltage - SQ2389CES-T1_GE3

This single MOSFETs device is a P-channel enhancement-mode MOSFET designed for PCB mounting in compact SOT-23 packages. It is intended for power switching and control in applications requiring moderate current handling and compact board space, with operation across a wide industrial-to-automotive temperature range.

Features and Benefits:

• Low on-resistance 0.094Ω reduces conduction losses
• 3W power dissipation enables sustained power handling
• Continuous drain current 4.1A supports medium-load switching
• Gate charge 12nC yields efficient switching performance
• Gate-source rating 20V allows robust gate drive margins
• Forward voltage -1.2V minimises voltage drop in conduction

Applications

• Suitable for automotive power distribution and load switching
• Ideal for battery management and protection circuits
• Used with driver ICs in DC power conversion stages
• Can be used for reverse-polarity protection in modules
• Used for compact motor driver low-side or high-side switching

What mounting considerations are required for thermal management?

Thermal performance depends on PCB copper area and vias

increasing copper around the SOT-23 pad improves heat dissipation for the 3W power rating.

Which environmental extremes can it withstand during operation?

The device remains functional from -55°C up to 175°C, suitable for high-temperature automotive compartments and harsh industrial settings.

What polarity and voltage limitations apply to the gate and drain?

The drain-to-source blocking capability is -40V and the gate may be driven up to 20V relative to source within safe operating limits.

How many pins are available and what is the package footprint?

It is supplied in a three-pin SOT-23 package with overall package dimensions of 3.04mm by 2.64mm.