Infineon OptiMOS N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1
- RS Stock No.:
- 348-988
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPD60R180CM8XTMA1
- ผู้ผลิต:
- Infineon
มีส่วนลดเมื่อซื้อจำนวนมาก
ดูตัวเลือกการกำหนดราคาในการซื้อปริมาณมากยอดรวมย่อย (1 แพ็ค แพ็คละ 5 ชิ้น)*
THB420.62
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB450.065
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
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- จะส่งได้หลังจากวันที่ 01 กุมภาพันธ์ 2570 ไปอีกประมาณ 7 วันทำการ
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ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 5 - 45 | THB84.124 | THB420.62 |
| 50 - 95 | THB79.87 | THB399.35 |
| 100 - 495 | THB73.984 | THB369.92 |
| 500 - 995 | THB68.102 | THB340.51 |
| 1000 + | THB65.598 | THB327.99 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 348-988
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPD60R180CM8XTMA1
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 127W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 127W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS Series MOSFET, 600V Drain Source Voltage, 18A Continuous Drain Current - IPD60R180CM8XTMA1
This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in surface-mount assemblies. It operates across a wide temperature span and is intended for demanding electronic environments where robust voltage handling and compact mounting are required.
Features and Benefits:
• 600V drain-to-source rating enables high-voltage switching applications
• 18A continuous drain current supports substantial load currents
• 0.18 Ω low on-resistance reduces conduction losses in power circuits
• 127W maximum dissipation allows higher power throughput
• 20V gate threshold supports standard gate-drive voltages
• 17 nC typical gate charge permits fast switching with manageable drive energy
• 18A continuous drain current supports substantial load currents
• 0.18 Ω low on-resistance reduces conduction losses in power circuits
• 127W maximum dissipation allows higher power throughput
• 20V gate threshold supports standard gate-drive voltages
• 17 nC typical gate charge permits fast switching with manageable drive energy
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used with DC-DC converters in energy management systems
• Can be used for inverter front-ends in renewable installations
• Appropriate for compact surface-mount power modules
• Ideal for industrial motor-drive switching stages
• Used with DC-DC converters in energy management systems
• Can be used for inverter front-ends in renewable installations
• Appropriate for compact surface-mount power modules
What package type is used for efficient PCB mounting?
It is supplied in a TO-252 style surface-mount package with three pins for streamlined board assembly.
How does it cope with extreme ambient conditions?
The device is rated to function from -55 °C up to 150 °C, accommodating elevated junction temperatures in thermally constrained designs.
What gate-drive considerations should be made for switching performance?
Drive circuits should provide up to 20V gate-to-source excursion and account for the 17 nC gate charge when sizing driver current and transition times.
Is this device suitable for automotive-certified systems?
It is not specified to meet automotive standards and should be evaluated against automotive regulatory requirements before use in certified vehicle systems.
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