onsemi Digital Transistor, 80 V dc NPN Through Hole TO-220, 3-Pin

Bulk discount available

Subtotal (1 tube of 50 units)*

THB1,154.10

(exc. VAT)

THB1,234.90

(inc. VAT)

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  • 200 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
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Units
Per unit
Per Tube*
50 - 50THB23.082THB1,154.10
100 - 150THB22.39THB1,119.50
200 +THB21.718THB1,085.90

*price indicative

RS Stock No.:
186-7368
Mfr. Part No.:
BDX53BG
Brand:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

TO-220

Maximum Collector Emitter Voltage Vceo

80V dc

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V dc

Minimum DC Current Gain hFE

750

Maximum Emitter Base Voltage VEBO

5V dc

Maximum Power Dissipation Pd

65W

Transistor Polarity

NPN

Pin Count

3

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.28mm

Series

BDX53B

Length

10.53mm

Automotive Standard

No

COO (Country of Origin):
CN
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C

Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

TO-220AB Compact Package

Pb-Free Packages are Available

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