ISSI IS42S32400J-6BLI SDRAM 128 MB Surface Mount, 90-Pin 32 bit BGA

The ISSI 128Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V VDD and 3.3V VDDQ memory systems containing 134,217,728 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 33,554,432-bit bank is organized as 4,096 rows by 256 columns by 32 bits. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 128Mb SDRAM has the Ability to synchronously burst data at a high data rate with automatic column-address generation, the Ability to interleave between internal banks to hide recharge time and the capAbility to randomly change column addresses on each clock cycle during burst access.

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