onsemi 20V 1A, Schottky Diode, 2-Pin CASE 59-10 1N5817G

This series consist of metal-to-silicon power diode. These diodes comes in chrome barrier metal, oxide passivation and metal overlap contact.

• Extremely Low VF
• Low Stored Charge
• Majority Carrier Conduction
• Low Power Loss/High Efficiency

• Case: Epoxy, Molded
• Weight: 0.4 Gram
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band

• High frequency inverters
• Free wheeling diodes
• Polarity protection diodes

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

Extremely Low vF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency Mechanical Characteristics
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Shipped in plastic bags, 1000 per bag.

Polarity: Cathode Indicated by Polarity Band
Marking: 1N5817, 1N5818, 1N5819
Lead Temperature for Soldering Purposes: 260°C Max for 10 seconds
These are Pb-Free Devices

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