onsemi NTMFS4C06N Type N-Channel MOSFET, 69 A, 30 V Enhancement, 8-Pin SO-8FL NTMFS4C06NT1G
- RS Stock No.:
- 867-3255
- Mfr. Part No.:
- NTMFS4C06NT1G
- Brand:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
THB502.55
(exc. VAT)
THB537.725
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
หมดสต็อกชั่วคราว
- จะส่งได้หลังจากวันที่ 19 ตุลาคม 2569 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 350 | THB20.102 | THB502.55 |
| 375 - 725 | THB19.60 | THB490.00 |
| 750 + | THB19.298 | THB482.45 |
*price indicative
- RS Stock No.:
- 867-3255
- Mfr. Part No.:
- NTMFS4C06NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8FL | |
| Series | NTMFS4C06N | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 30.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8FL | ||
Series NTMFS4C06N | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 30.5W | ||
Maximum Operating Temperature 150°C | ||
Length 6.1mm | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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