Infineon HEXFET Type N-Channel MOSFET, 62 A, 30 V Enhancement, 3-Pin TO-220 IRLB8721PBF
- RS Stock No.:
- 725-9322
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLB8721PBF
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 แพ็ค แพ็คละ 5 ชิ้น)*
THB241.78
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB258.705
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
สต็อกสุดท้ายของ RS
- 600 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ
- 35 ชิ้นสุดท้ายส่งจากวันที่ 02 มกราคม 2569
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 5 + | THB48.356 | THB241.78 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 725-9322
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLB8721PBF
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 9.02mm | |
| Distrelec Product Id | 304-45-324 | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 9.02mm | ||
Distrelec Product Id 304-45-324 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF
This MOSFET is a high-performance switching device tailored for various applications in electronics and automation. With a robust TO-220AB package, it features a continuous drain current capacity of 62A and can handle a maximum drain-source voltage of 30V. The device operates efficiently across a wide temperature range from -55°C to +175°C, making it suitable for demanding environments.
Features & Benefits
• Supports high frequency synchronous buck converters
• Engineered for high current use efficiently
• Fully characterised for avalanche voltage and current
• Minimal gate charge enhances switching performance
• Versatile mounting options simplify integration into designs
Applications
• Used in UPS and inverter systems
• Effective in high-frequency isolated DC-DC converters
• Suitable for synchronous rectification in industrial solutions
• Key component in computer processor power supplies
What is the significance of the device's low Rds(on)?
The low Rds(on) significantly lowers conduction losses, improving overall efficiency in power conversion applications, which is crucial for maintaining performance in high current operations.
How does the maximum gate threshold voltage affect device performance?
The gate threshold voltage range of 1.35V to 2.35V ensures the device can be reliably controlled in various applications, providing flexibility in integration with different drive circuits.
What considerations should be made for thermal management in applications?
Given the maximum power dissipation of 65W, appropriate thermal management strategies must be implemented, such as using a suitable heatsink, to prevent overheating and ensure reliable operation.
Can this MOSFET be used in automotive applications?
Yes, it is designed to operate effectively in high-temperature environments, making it suitable for automotive applications where thermal variability is a concern.
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