onsemi QFET Type P-Channel P-Channel QFET MOSFET, 2.7 A, 500 V Enhancement, 3-Pin TO-220AB FQP3P50
- RS Stock No.:
- 671-5118P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FQP3P50
- ผู้ผลิต:
- onsemi
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
- RS Stock No.:
- 671-5118P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FQP3P50
- ผู้ผลิต:
- onsemi
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | onsemi | |
| Product Type | P-Channel QFET MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | 55°C | |
| Forward Voltage Vf | -5V | |
| Maximum Power Dissipation Pd | 85W | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.4mm | |
| Length | 10.1mm | |
| Width | 4.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Series | QFET | |
| Channel Type | Type P | |
| Product Type | P-Channel QFET MOSFET | |
| Maximum Continuous Drain Current (Id) | 2.7 A | |
| Maximum Drain Source Voltage (Vds) | 500 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220AB | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | -5 V | |
| Height | 9.4 mm | |
| Length | 10.1 mm | |
| Maximum Drain Source Resistance (Rds) | 4.9 Ω | |
| Maximum Gate Source Voltage (Vgs) | 30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 85 W | |
| Minimum Operating Temperature | 55 °C | |
| Mount Type | Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 18 nC | |
| Width | 4.7 mm | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand onsemi | ||
Product Type P-Channel QFET MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature 55°C | ||
Forward Voltage Vf -5V | ||
Maximum Power Dissipation Pd 85W | ||
Maximum Operating Temperature 150°C | ||
Height 9.4mm | ||
Length 10.1mm | ||
Width 4.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Series QFET | ||
Channel Type Type P | ||
Product Type P-Channel QFET MOSFET | ||
Maximum Continuous Drain Current (Id) 2.7 A | ||
Maximum Drain Source Voltage (Vds) 500 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220AB | ||
Automotive Standard No | ||
Forward Voltage (Vf) -5 V | ||
Height 9.4 mm | ||
Length 10.1 mm | ||
Maximum Drain Source Resistance (Rds) 4.9 Ω | ||
Maximum Gate Source Voltage (Vgs) 30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 85 W | ||
Minimum Operating Temperature 55 °C | ||
Mount Type Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 18 nC | ||
Width 4.7 mm | ||