DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin UDFN-2020 DMN2053UFDB-7
- RS Stock No.:
- 246-7510
- Mfr. Part No.:
- DMN2053UFDB-7
- Brand:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
THB216.60
(exc. VAT)
THB231.75
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- เพิ่มอีก 1,725 ชิ้นจะส่งได้หลังจากวันที่ 09 กุมภาพันธ์ 2569 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | THB8.664 | THB216.60 |
| 50 - 75 | THB8.495 | THB212.38 |
| 100 - 225 | THB5.921 | THB148.03 |
| 250 - 975 | THB5.809 | THB145.23 |
| 1000 + | THB3.347 | THB83.68 |
*price indicative
- RS Stock No.:
- 246-7510
- Mfr. Part No.:
- DMN2053UFDB-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.056Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 0.82W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.056Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 0.82W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate
Related links
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex 2 Type P-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex 2 Type P-Channel MOSFET 6-Pin UDFN-2020 DMP2110UFDB-7
- DiodesZetex 2 Type P 4.6 A 6-Pin UDFN-2020
- DiodesZetex 2 Type P 4.6 A 6-Pin UDFN-2020 DMC2053UFDB-7
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020 DMN3055LFDBQ-7