RS1E130GNTB N-Channel MOSFET, 35 A, 30 V RS1E130GN, 8-Pin HSOP ROHM
- RS Stock No.:
- 183-5451P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- RS1E130GNTB
- ผู้ผลิต:
- ROHM
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- RS Stock No.:
- 183-5451P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- RS1E130GNTB
- ผู้ผลิต:
- ROHM
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | HSOP8 | |
| Series | RS1E130GN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 17.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 22 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | 150 °C | |
| Typical Gate Charge @ Vgs | 7.9 nC @ 10 V | |
| Length | 5.8mm | |
| Number of Elements per Chip | 1 | |
| Width | 5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type HSOP8 | ||
Series RS1E130GN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 22 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature 150 °C | ||
Typical Gate Charge @ Vgs 7.9 nC @ 10 V | ||
Length 5.8mm | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
- COO (Country of Origin):
- TH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on - resistance
High Power Package (HSOP8)
Pb-free lead plating
Halogen Free
High Power Package (HSOP8)
Pb-free lead plating
Halogen Free