N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 IXYS IXTH48N65X2

RS Stock No.:: 168-4810
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IXTH48N65X2
ผู้ผลิต / Manufacturer:: IXYS

N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 IXYS IXTH48N65X2

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 21/01/2025, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)

ราคา / Price Each (In a Tube of 30)

THB325.889

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB348.701

(รวมภาษีมูลค่าเพิ่ม)

Units	ต่อหน่วย	Per Tube*
30 - 30	THB325.889	THB9,776.67
60 - 90	THB318.804	THB9,564.12
120 +	THB311.719	THB9,351.57

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 168-4810
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IXTH48N65X2
ผู้ผลิต / Manufacturer:: IXYS

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

COO (Country of Origin):: US

รายละเอียดสินค้า / Product Details

N-channel Power MOSFET, IXYS X2-Class Series

The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

คุณสมบัติ / Specifications

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	48 A
Maximum Drain Source Voltage	650 V
Series	X2-Class
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	660 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Width	21.34mm
Length	16.13mm
Typical Gate Charge @ Vgs	76 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	5.21mm
Forward Diode Voltage	1.4V