SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D
- RS Stock No.:
- 162-9709
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C2M0160120D
- ผู้ผลิต / Manufacturer:
- Wolfspeed
390 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 30)
THB365.233
(exc. VAT)
THB390.799
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | THB365.233 | THB10,956.99 |
| 60 - 90 | THB354.276 | THB10,628.28 |
| 120 + | THB343.648 | THB10,309.44 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 162-9709
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C2M0160120D
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 196 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -5 V, +20 V |
| Width | 5.21mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 34 nC @ 20 V, 34 nC @ 5 V |
| Transistor Material | SiC |
| Length | 16.13mm |
| Minimum Operating Temperature | -55 °C |
| Height | 21.1mm |
| Forward Diode Voltage | 3.3V |