IXYS Single X2-Class 1 N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2
- RS Stock No.:
- 146-1786
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXTH12N65X2
- ผู้ผลิต:
- IXYS
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- RS Stock No.:
- 146-1786
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXTH12N65X2
- ผู้ผลิต:
- IXYS
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | IXYS | |
| Transistor Configuration | Single | |
| Series | X2-Class | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 12 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.4 V | |
| Height | 5.3 mm | |
| Length | 16.24 mm | |
| Maximum Drain Source Resistance (Rds) | 300 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -30 V, +30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 180 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 17.7 nC | |
| Width | 21.45 mm | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand IXYS | ||
Transistor Configuration Single | ||
Series X2-Class | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 12 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.4 V | ||
Height 5.3 mm | ||
Length 16.24 mm | ||
Maximum Drain Source Resistance (Rds) 300 mΩ | ||
Maximum Gate Source Voltage (Vgs) -30 V, +30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 180 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 17.7 nC | ||
Width 21.45 mm | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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