onsemi NTA Type N-Channel MOSFET, 915 mA, 20 V Enhancement, 3-Pin SC-75
- RS Stock No.:
- 103-5120
- Mfr. Part No.:
- NTA4153NT1G
- Brand:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
THB6,732.00
(exc. VAT)
THB7,203.00
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
มีในสต็อก
- เพิ่มอีก 33,000 ชิ้นจะส่งได้หลังจากวันที่ 09 กุมภาพันธ์ 2569 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | THB2.244 | THB6,732.00 |
| 6000 - 9000 | THB2.177 | THB6,531.00 |
| 12000 + | THB2.112 | THB6,336.00 |
*price indicative
- RS Stock No.:
- 103-5120
- Mfr. Part No.:
- NTA4153NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 915mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTA | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Typical Gate Charge Qg @ Vgs | 1.82nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.8mm | |
| Standards/Approvals | No | |
| Width | 1.6 mm | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 915mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTA | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 300mW | ||
Typical Gate Charge Qg @ Vgs 1.82nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 0.8mm | ||
Standards/Approvals No | ||
Width 1.6 mm | ||
Height 0.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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