STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK
- RS Stock No.:
- 103-2006
- Mfr. Part No.:
- STH310N10F7-6
- Brand:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 reel of 1000 units)*
THB153,871.00
(exc. VAT)
THB164,642.00
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
ไม่สามารถเข้าถึงข้อมูลสต็อกได้ในขณะนี้
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | THB153.871 | THB153,871.00 |
| 2000 - 3000 | THB149.255 | THB149,255.00 |
| 4000 + | THB144.777 | THB144,777.00 |
*price indicative
- RS Stock No.:
- 103-2006
- Mfr. Part No.:
- STH310N10F7-6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | H2PAK | |
| Series | STripFET H7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 315W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Width | 10.4 mm | |
| Height | 4.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type H2PAK | ||
Series STripFET H7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 315W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Width 10.4 mm | ||
Height 4.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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