DiodesZetex DMG2302UKQ N channel-Channel MOSFET, 2.8 A, 20 V Enhancement, 3-Pin SOT-23 DMG2302UKQ-7
- RS Stock No.:
- 719-562
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- DMG2302UKQ-7
- ผู้ผลิต:
- DiodesZetex
N
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
มีส่วนลดเมื่อซื้อจำนวนมาก
ยอดรวมย่อย (1 แพ็ค แพ็คละ 5 ชิ้น)*
THB29.21
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB31.255
(รวมภาษีมูลค่าเพิ่ม)
ไม่สามารถเข้าถึงข้อมูลสต็อกได้ในขณะนี้ - โปรดกลับมาตรวจสอบอีกครั้งภายหลัง
ชิ้น | ต่อหน่วย | ต่อแพ็ค* |
|---|---|---|
| 5 - 120 | THB5.842 | THB29.21 |
| 125 - 495 | THB5.248 | THB26.24 |
| 500 - 2495 | THB4.654 | THB23.27 |
| 2500 + | THB3.96 | THB19.80 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 719-562
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- DMG2302UKQ-7
- ผู้ผลิต:
- DiodesZetex
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMG2302UKQ | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.5 mm | |
| Height | 1.1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMG2302UKQ | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.1W | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Maximum Operating Temperature 150°C | ||
Width 2.5 mm | ||
Height 1.1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex N Channel enhancement mode MOSFET, specifically engineered to meet the rigorous demands of automotive applications. Designed to deliver superior efficiency, it excels in power management and control functions, making it an Ideal choice for tasks such as DC-DC conversion and motor management. With its robust construction and compliance with AEC-Q101 standards, this device is recognised for its reliability and high performance in critical environments. The product combines low on-resistance with fast switching capabilities, ensuring it operates efficiently under various conditions.
Low on resistance characteristics enhance power efficiency
Fast switching speed optimises performance for high-frequency applications
Qualified to AEC-Q101 standards, ensuring reliability in automotive applications
Qualified for PPAP, supporting Advanced product quality planning
ESD protected gate design improves robustness and safety
Halogen and antimony-free, contributing to environmentally friendly practices
Designed with low input capacitance for improved responsiveness
Compliant with RoHS standards, ensuring adherence to environmental regulations
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