Infineon IKW20N60H3FKSA1 Single IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 892-2197
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IKW20N60H3FKSA1
ผู้ผลิต:: Infineon

Infineon IKW20N60H3FKSA1 Single IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

มีส่วนลดเมื่อซื้อจำนวนมาก

ยอดรวมย่อย (1 แพ็ค แพ็คละ 4 ชิ้น)*

THB375.44

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB401.72

(รวมภาษีมูลค่าเพิ่ม)

ส่งฟรีหากซื้อเกิน ฿2,500.00

มีในสต็อก

172 ชิ้นพร้อมจัดส่งจากคลังสินค้าต่างประเทศ

ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง

ชิ้น	ต่อหน่วย	ต่อแพ็ค*
4 - 4	THB93.86	THB375.44
8 - 12	THB91.515	THB366.06
16 +	THB90.108	THB360.43

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 892-2197
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IKW20N60H3FKSA1
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	170 W
	Package Type	TO-247
	Configuration	Single
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	100kHz
	Transistor Configuration	Single
	Dimensions	16.13 x 5.21 x 21.1mm
	Gate Capacitance	1100pF
	Minimum Operating Temperature	-40 °C
	Energy Rating	1.07mJ
	Maximum Operating Temperature	+175 °C

	เลือกทั้งหมด
	Brand Infineon
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 170 W
	Package Type TO-247
	Configuration Single
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 100kHz
	Transistor Configuration Single
	Dimensions 16.13 x 5.21 x 21.1mm
	Gate Capacitance 1100pF
	Minimum Operating Temperature -40 °C
	Energy Rating 1.07mJ
	Maximum Operating Temperature +175 °C

Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1

This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.

Features & Benefits

• Utilises TRENCHSTOP technology, delivering low VCEsat
• Achieves maximum junction temperature of 175°C for robust performance
• Features a soft, fast recovery anti-parallel diode enhancing reliability
• Ensures a switching speed of 100kHz for efficient operation

Applications

• Utilised in uninterruptible power supplies for reliable operation
• Effective in welding converters for high-performance welding
• Suitable for converters with high switching frequency requirements

What are the thermal resistance characteristics of this module?

The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.

How does the IGBT handle short circuits and power dissipation?

It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.

What is the significance of gate capacitance in this IGBT?

The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.