Infineon IKQ75N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,

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ตัวเลือกบรรจุภัณฑ์ / Packaging Options :
RS Stock No.:
284-672
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
IKQ75N120CH7XKSA1
ผู้ผลิต:
Infineon
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เลือกทั้งหมด

Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

549 W

Number of Transistors

1

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

PG-TO247-3-PLUS-N

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT with high speed 1200 V trench stop IGBT 7 technology is designed to deliver unparalleled performance in demanding applications. It features a state of the art design that combines efficient power handling with low switching losses, making it ideal for high efficiency power converters. With its robust co packing of a full rated current, soft commutating rapid diode, and an optimised thermal performance, this device is tailored for industrial and automotive applications, including EV charging and welding systems. Offering a maximum junction temperature of 175°C, this product ensures reliability and longevity, even under extreme conditions.

Optimized for high efficiency in hard switching
Pb free lead plating for environmental compliance
Easy paralleling with positive temperature coefficient
Well suited for industrial applications like UPS and inverters
Comprehensive product spectrum with modelling support
Delivers low saturation voltage for energy savings
Transient gate emitter voltages improve switching performance

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