Renesas Electronics SRAM Memory, R1LV0408DSA-7LR#B0- 4Mbit
- RS Stock No.:
- 772-6162P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- R1LV0408DSA-7LR#B0
- ผู้ผลิต:
- Renesas Electronics
ไม่พร้อมจำหน่าย
RS จะไม่สต็อกสินค้านี้อีกต่อไป
- RS Stock No.:
- 772-6162P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- R1LV0408DSA-7LR#B0
- ผู้ผลิต:
- Renesas Electronics
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Renesas Electronics | |
| Memory Size | 4Mbit | |
| Organisation | 512K x 8 bit | |
| Number of Words | 512k | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 70ns | |
| Address Bus Width | 19bit | |
| Timing Type | Asynchronous | |
| Mounting Type | Surface Mount | |
| Package Type | STSOP | |
| Pin Count | 32 | |
| Dimensions | 11.9 x 8.1 x 1mm | |
| Height | 1mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Minimum Operating Supply Voltage | 2.7 V dc | |
| Width | 8.1mm | |
| Maximum Operating Temperature | +70 °C | |
| Length | 11.9mm | |
| Minimum Operating Temperature | 0 °C | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Renesas Electronics | ||
Memory Size 4Mbit | ||
Organisation 512K x 8 bit | ||
Number of Words 512k | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 70ns | ||
Address Bus Width 19bit | ||
Timing Type Asynchronous | ||
Mounting Type Surface Mount | ||
Package Type STSOP | ||
Pin Count 32 | ||
Dimensions 11.9 x 8.1 x 1mm | ||
Height 1mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Minimum Operating Supply Voltage 2.7 V dc | ||
Width 8.1mm | ||
Maximum Operating Temperature +70 °C | ||
Length 11.9mm | ||
Minimum Operating Temperature 0 °C | ||
- COO (Country of Origin):
- JP
Low Power SRAM, Renesas Electronics
The R1LV Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.
Single 2.7V to 3.6V power supply
Small stand-by current
No clocks, No refresh required
All inputs and outputs are TTL compatible
Three-state outputs: OR-tie Capability
Small stand-by current
No clocks, No refresh required
All inputs and outputs are TTL compatible
Three-state outputs: OR-tie Capability
SRAM (Static Random Access Memory)
ลิงก์ที่เกี่ยวข้อง
- Renesas Electronics SRAM Memory, R1LV0408DSA-7LI#B0- 4Mbit
- Renesas Electronics SRAM Memory, R1LV0408DSA-5SR#B0- 4Mbit
- Renesas Electronics SRAM, R1RW0408DGE-2PI#B0- 4Mbit
- Renesas Electronics SRAM, R1RP0408DGE-2LR#B0- 4Mbit
- Renesas Electronics SRAM, R1RP0416DGE-2LR#B0- 4Mbit
- Renesas Electronics SRAM, R1RW0408DGE-2LR#B0- 4Mbit
- Renesas Electronics SRAM, R1RW0408DGE-2PR#B0- 4Mbit
- Renesas Electronics SRAM Memory, R1RW0416DSB-2LR#D0- 4Mbit
