STMicroelectronics STDRIVEG611Q High Side 4, High Side Power Switch IC 18-Pin, QFN

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RS Stock No.:
330-240
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
STDRIVEG611Q
ผู้ผลิต:
STMicroelectronics
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เลือกทั้งหมด

Brand

STMicroelectronics

Product Type

Power Switch IC

Power Switch Topology

High Side

Power Switch Type

High Side

Switch On Resistance RdsOn

3.7Ω

Number of Outputs

3

Number of Inputs

4

Minimum Supply Voltage

0.3V

Package Type

QFN

Pin Count

18

Maximum Supply Voltage

21V

Maximum Operating Temperature

125°C

Operating Current

3.5mA

Minimum Operating Temperature

-40°C

Standards/Approvals

RoHS

Height

1mm

Length

5mm

Width

4 mm

Series

STDRIVEG611

Automotive Standard

No

COO (Country of Origin):
TH
The STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.

High-side and low-side linear regulators for 6 V gate driving voltage

Fast high-side startup time 5 μs

45 ns propagation delay and 15 ns minimum output pulse

High switching frequency (greater than 1 MHz)

Embedded 600 V bootstrap diode

Full support of GaN hard-switching operation

Comparator for overcurrent detection with Smart Shutdown

UVLO function on VCC, VHS, and VLS

Separated logic inputs and shutdown pin

Fault pin for overcurrent, over temperature and UVLO reporting

Stand-by function for low consumption mode

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