STMicroelectronics Demonstration Board Power Management for STGAP2SM for STGAP2SM Isolated 4 A Single Gate
- RS Stock No.:
- 196-1722
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- EVALSTGAP2SM
- ผู้ผลิต:
- STMicroelectronics
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- RS Stock No.:
- 196-1722
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- EVALSTGAP2SM
- ผู้ผลิต:
- STMicroelectronics
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | STMicroelectronics | |
| Power Management Function | Power Management | |
| Product Type | Power Management Development Kit | |
| For Use With | STGAP2SM Isolated 4 A Single Gate | |
| Kit Classification | Evaluation Board | |
| Featured Device | STGAP2SM | |
| Kit Name | Demonstration Board | |
| Standards/Approvals | RoHS | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand STMicroelectronics | ||
Power Management Function Power Management | ||
Product Type Power Management Development Kit | ||
For Use With STGAP2SM Isolated 4 A Single Gate | ||
Kit Classification Evaluation Board | ||
Featured Device STGAP2SM | ||
Kit Name Demonstration Board | ||
Standards/Approvals RoHS | ||
The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in industrial applications equipped with MOSFET/IGBT/SiC power switch. Two different variants are available: one with separated source and sink outputs, the other with single output pin and a dedicated pin for Miller clamp function. The EVALSTGAP2S is suitable for both output configuration variants. The device integrates protection functions: UVLO and thermal shutdown are included to simplify the design of high reliability systems. Dual input pins allow choosing the control signal polarity and also implementing HW interlocking protection in order to avoid cross-conduction in case of controller malfunction. The device allows the implementation of negative gate driving, and the on-board isolated DC-DC converters allow working with optimized driving voltage for MOSFET/IGBT or SiC.
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